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| AON3601 Complementary Enhancement Mode Field Effect Transistor General Description The AON3601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.Standard Product AON3601 is Pb- Features n-channel VDS (V) = 30V ID = 6.6A (VGS=10V) RDS(ON) < 29m (VGS=10V) < 42m (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52m (VGS = -10V) < 72m (VGS = -4.5V) free (meets ROHS & Sony 259 specifications). AON3601L is a Green Product ordering option. AON3601 and AON3601L are electrically identical. DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 D2 D1 D1 G2 D2 D1 G1 S2 S1 n-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B p-channel Max p-channel -30 20 -5 -4.2 -20 2 1.44 -55 to 150 W C A Units V V VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 20 6.6 5.6 30 2 1.44 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 50 90 43 45 80 40 Max Units 62.5 C/W 110 C/W 53 C/W 62.5 110 50 C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AON3601 N-CHANNEL: Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=4.5V, V DS=5V VGS=10V, I D=6.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=5.5A Forward Transconductance VDS=5V, ID=6.6A 10 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125C 1 20 24.3 34 34.5 15.4 0.78 1 3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=10V, VDS=15V, I D=6.6A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.3, RGEN=3 IF=6.6A, dI/dt=100A/s IF=6.6A, dI/dt=100A/s 4.1 20.6 5.2 16.5 7.8 20 3.6 17 8.1 820 29 41 42 1.8 Min 30 0.004 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0: April 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AON3601 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10V 25 20 ID (A) 12 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V 3.5V ID(A) 8 125C 4 25C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics 6V 5V 4.5V 16 VDS=5V 30 4V 60 50 RDS(ON) (m) 40 30 20 VGS=10V 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 60 50 40 30 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C VGS=4.5V Normalized On-Resistance 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=6.6A VGS=4.5V ID=5.5A 1.0E+01 ID=5A IS Amps 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AON3601 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 1000 VDS=15V ID=6.6A Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss Ciss f=1MHz VGS=0V VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited ID (Amps) 10 1ms 10ms 0.1s 1 1s 10s DC 0.1 0.1 1 VDS (Volts) TJ(Max)=150C TA=25C 100s 10s Power W 40 TJ(Max)=150C TA=25C 30 20 10 10 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 100 1000 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AON3601 P-CHANNEL: Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-4.2A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A TJ=125C 6 -1 -20 39 54 60 8.6 -0.79 52 70 72 -1 -2.8 900 -2 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns 30 ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 700 120 75 10 14.7 15 19 10 SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-10V, VDS=-15V, ID=-5A 7.6 2 3.8 8.3 5 29 14 23.5 13.4 VGS=-10V, VDS=-15V, RL=3, RGEN=3 IF=-5A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0: April 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AON3601 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 15 -4V -ID (A) 6 10 -3.5V VGS=-3V -2.5V 0 0.00 0 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance 1.60E+00 VGS=-4.5V ID=-4.2A VGS=-10V ID=-5A -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) 4 2 -6V 10 -5V -4.5V 8 VDS=-5V 125C 5 60 25C 72 80 RDS(ON) (m) VGS=-4.5V 60 VGS=-10V 40 1.40E+00 1.20E+00 1.00E+00 20 1 3 5 7 9 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 RDS(ON) (m) -IS (A) 100 80 60 40 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-5A 8.00E-01 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AON3601 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 16 -Qg (nC) Figure 7: Gate-Charge Characteristics 1200 VDS=-15V ID=-5A Capacitance (pF) 1000 800 600 400 Coss 200 0 0 Crss 5 10 Ciss 60 15 20 72 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100 TJ(Max)=150C TA=25C RDS(ON) limited 0.1s 40 10s Power (W) 100s 1ms 10ms 30 TJ(Max)=150C TA=25C -ID (Amps) 10 20 1 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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